Samsung Electronics has commenced the shipment of the industry's first 12-layer HBM4E memory samples, reinforcing its position in the high-bandwidth memory sector. Following the successful launch of HBM4 earlier this year, the HBM4E addresses the growing requirements for artificial intelligence (AI) computing and hyperscale infrastructure. The HBM4E offers stable speeds of 14 gigabits-per-second (Gbps), with potential scalability up to 16 Gbps, representing a 20% increase over its predecessor. It achieves a memory bandwidth of up to 3.6 terabytes-per-second (TB/s) per stack, significantly enhancing performance for large language models and next-generation AI applications. The memory is available in a 48-gigabyte (GB) configuration, with plans to expand to 32 GB and 64 GB versions. Samsung's advanced manufacturing capabilities and low-power design technologies have improved energy efficiency by 16% and thermal resistance by 14% compared to previous generations, ensuring reliability in data centers. Mass production of HBM4E will follow initial shipments, responding to positive feedback on HBM4's performance and efficiency.