A team of researchers from Columbia University and UC Riverside has achieved a significant breakthrough in quantum materials by demonstrating an ultrafast photo-induced transition from metallic to insulating states in two-dimensional moiré heterostructures. Published in *Physical Review Letters*, the study involved fabricating devices using ultra-thin layers of tungsten disulfide (WS2) and tungsten diselenide (WSe2), incorporating graphite electrodes for charge injection. Initially, the devices were in a metallic state, allowing free electron movement. However, after exposure to short laser pulses, they transitioned into correlated insulating states. This transition was attributed to the ultrafast injection of photoexcited holes from the graphite. The findings present a promising avenue for developing ultrafast quantum memories and processors, enabling control over carrier density in moiré quantum phases on rapid timescales. The researchers aim to further explore the potential of their methodology for tuning quantum phases in moiré devices, potentially uncovering hidden quantum states.