Researchers from North Carolina State University have successfully demonstrated the ability to manipulate the physical and electronic properties of ferroelectric thin films using van der Waals forces. This innovative approach allows for the deposition of a tin selenide (SnSe) thin film on a monolayer of molybdenum disulfide (MoS 2 ), which has a close lattice match with SnSe, enhancing the strength of the van der Waals interactions. The study reveals that these interactions significantly influence the films' thickness, strain state, and domain architecture, which are crucial for their physical and electronic properties. The use of MoS 2 as a substrate also enables the growth of larger, higher-quality thin films with fewer defects compared to previous methods. These advancements could lead to new techniques for engineering materials suitable for smaller, more energy-efficient electronic devices. The study, published in ACS Nano, is co-authored by a team of researchers from various institutions, including the University of Florida and Pennsylvania State University, and is backed by grants from the National Science Foundation and the Department of Energy.