Researchers from Kanazawa University, in collaboration with Diamond and Carbon Applications in Germany, have introduced a groundbreaking buried-growth process for nitrogen-vacancy (NV) centers in diamonds. This innovative technique employs microwave plasma chemical vapor deposition (MPCVD) combined with nitrogen-radical selective etching, allowing for precise control over both the position and orientation of NV centers, which are critical for the development of scalable quantum technologies. Unlike traditional methods, which can disrupt the diamond lattice, this approach minimizes crystal damage and enhances the durability of metal masks used during the etching process. The successful optical measurements confirmed that NV centers are selectively buried in predefined regions, providing a stable platform for future quantum applications. The NV centers, which emit red fluorescence when illuminated, can be aligned along specific crystallographic orientations, making them promising candidates for high-density integration in diamond-based quantum devices. This advancement is expected to significantly contribute to the realization of room-temperature diamond quantum computers and scalable quantum technologies.